Quantum Simulators Successfully Mimic the Hall Effect Using Cold Atoms

In the world of physics, the Hall effect is a well-known phenomenon where a voltage drop develops perpendicularly to the flow of current when a magnetic field is applied. This creates what is known as transverse Hall resistance. While recent advances in quantum simulators have hinted at these complex interactions, a direct measurement of the Hall voltage in a non-electronic system remained elusive—until now.

A research team has successfully demonstrated a technique for measuring this voltage using a neutral-atom-based quantum simulator. By creating a 'cold-atom analogue' of a solid-state Hall bar, the scientists managed to replicate the conditions usually found in electronic materials but used strongly interacting fermions (a class of particles that includes electrons) in a controlled, non-electronic environment. This represents the first direct measurement of Hall resistance in such a system.

The study also examined how this resistance relies on carrier density, supported by rigorous theoretical analyses. This achievement is particularly significant as it closes a major gap between analogue quantum simulations and the physical measurements performed in solid-state systems. By providing a key tool for exploration, this work opens the door to investigating the Hall effect in highly tunable systems where particles interact strongly, offering a clearer window into the fundamental behaviour of quantum matter.