Building Radiation-Proof Electronics for Deep Space

Conventional silicon-based electronics face a major hurdle: they suffer severe performance degradation when exposed to harsh radiation in aerospace missions, deep-space exploration, or nuclear infrastructure. A new review evaluates the progress of robust next-generation technologies designed to withstand these hostile conditions.

The spotlight is on carbon nanotube transistors (CNTFETs) and two-dimensional material-based devices. Unlike silicon, these materials feature robust covalent bonding and atomic-scale thin channels, which inherently suppress the structural damage caused by radiation particles. Furthermore, spin-transfer torque and spin-orbit torque magnetic memory (MRAM) provide intrinsic resistance by utilising magnetism-mediated data storage rather than fragile electric charges.

To assemble these technologies, researchers point to monolithic three-dimensional (M3D) integration. This transformative approach allows for the vertical stacking of heterogeneous devices, increasing functional density and overcoming scaling bottlenecks. Although challenges in material deposition and manufacturing scalability remain, this roadmap offers a promising path toward electronics capable of surviving environments where silicon fails.